IRF7342D2TRPBF
MOSFET P-CH 55V 3.4A 8-SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRF7342D2TRPBF, offers a Drain to Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 3.4 A at 25°C. This device features a low Rds On of 105 mOhm at 3.4 A and 10 V, with a Gate Charge (Qg) of 38 nC at 10 V and an Input Capacitance (Ciss) of 690 pF at 25 V. The IRF7342D2TRPBF is constructed using MOSFET technology and includes an isolated Schottky diode. It is supplied in an 8-SOIC package, suitable for surface mounting, and is delivered in Cut Tape (CT) packaging. This component is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |