IRF7342D2PBF
MOSFET P-CH 55V 3.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRF7342D2PBF is a P-Channel MOSFET, part of the FETKY™ series. This component features a Drain to Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 3.4A at 25°C. With a low On-Resistance (Rds On) of 105mOhm maximum at 3.4A and 10V Vgs, it offers efficient power handling. The device includes an integrated Schottky Diode and is housed in an 8-SOIC surface mount package, designed for optimal thermal performance with a maximum power dissipation of 2W. Ideal for applications in power management and switching, the IRF7342D2PBF supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge of 38 nC at 10V. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |