IRF7326D2TRPBF
MOSFET P-CH 30V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ IRF7326D2TRPBF is a P-channel Power MOSFET designed for efficient switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current of 3.6A at 25°C (Ta), with a maximum power dissipation of 2W (Ta). The IRF7326D2TRPBF offers a low on-resistance (Rds On) of 100mOhm at 1.8A and 10V gate-source voltage. A key characteristic is the integrated Schottky diode, providing enhanced performance in power management solutions. The MOSFET is housed in a standard 8-SOIC package and supplied on tape and reel for automated assembly. Operating temperature range is -55°C to 150°C (TJ). This component is well-suited for use in automotive, industrial, and consumer electronics power supply circuits.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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