IRF7326D2TR
MOSFET P-CH 30V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7326D2TR is a P-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 3.6A at 25°C ambient. The device offers low on-resistance with a maximum of 100mOhm at 1.8A and 10V Vgs, ensuring minimal power loss. Integrated within the 8-SOIC package is a Schottky diode, providing fast switching characteristics. The FETKY™ series designation highlights its suitability for applications requiring high-frequency switching and reduced voltage overshoot. Its surface mount capability and operating temperature range of -55°C to 150°C make it adaptable to various industrial and automotive environments. Key parameters include a gate charge of 25nC and input capacitance of 440pF, facilitating robust circuit design.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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