IRF7326D2
MOSFET P-CH 30V 3.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7326D2 is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source voltage (Vdss) of 30 V and a continuous drain current (Id) of 3.6 A at 25°C. The Rds(On) is specified at a maximum of 100 mOhm at 1.8 A and 10 V Vgs. A key characteristic of this MOSFET is the integrated Schottky diode, providing enhanced performance. The device is housed in an 8-SOIC package, suitable for surface mount assembly. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |