IRF7324D1TRPBF
MOSFET P-CH 20V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' FETKY™ series P-channel MOSFET, part number IRF7324D1TRPBF, offers robust performance in a surface-mount 8-SOIC package. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.2A at 25°C, with a maximum power dissipation of 2W. Optimized for efficient switching, its Rds(On) is specified at 270mOhm maximum at 1.2A and 4.5V Vgs. The integrated Schottky diode and isolated FET construction provide enhanced circuit protection and design flexibility. Key parameters include a gate charge of 7.8 nC at 4.5V Vgs and input capacitance of 260pF at 15V Vds. This component is suitable for applications in power management, automotive systems, and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |
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