IRF7324D1TR
MOSFET P-CH 20V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series P-channel MOSFET, part number IRF7324D1TR, offers a 20V drain-source breakdown voltage and a continuous drain current of 2.2A at 25°C. This surface mount device, housed in an 8-SOIC package, features a low Rds(on) of 270mOhm at 1.2A and 4.5V Vgs. The integrated Schottky diode provides isolated functionality, beneficial in various power management applications. Key parameters include a gate charge of 7.8 nC at 4.5V Vgs and input capacitance of 260 pF at 15V Vds. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |
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