IRF7324D1
MOSFET P-CH 20V 2.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series P-channel MOSFET, part number IRF7324D1. This device features a 20V drain-to-source voltage and a continuous drain current of 2.2A at 25°C. The IRF7324D1 offers a low on-resistance of 270mOhm maximum at 1.2A and 4.5V gate-source voltage. Integrated is a Schottky diode for enhanced performance. The component is housed in an 8-SOIC package and supports surface mount assembly. Key parameters include a gate charge of 7.8 nC at 4.5V and input capacitance of 260 pF at 15V. Maximum power dissipation is rated at 2W. This MOSFET is utilized in applications such as power management and load switching within the automotive and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |
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