IRF7322D1
MOSFET P-CH 20V 5.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series P-channel MOSFET, part number IRF7322D1. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C ambient. The IRF7322D1 is designed for surface mounting within an 8-SOIC package, offering a maximum power dissipation of 2W. Key characteristics include a maximum on-resistance (Rds On) of 62mOhm at 2.9A and 4.5V Vgs, and a gate charge (Qg) of 29nC at 4.5V. The integrated Schottky diode provides enhanced performance. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 2.9A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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