IRF7321D2
MOSFET P-CH 30V 4.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ P-Channel MOSFET, part number IRF7321D2, is a surface-mount device in an 8-SOIC package. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4.7A at 25°C. The Rds On is specified at a maximum of 62mOhm at 4.9A and 10V gate drive. Key characteristics include a maximum Gate Charge (Qg) of 34 nC at 10V and an Input Capacitance (Ciss) of 710 pF at 25V. The device integrates a Schottky diode and operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 2W. This MOSFET is utilized in applications such as power management and high-frequency switching.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.9A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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