IRF7233TRPBF
MOSFET P-CH 12V 9.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7233TRPBF, is a surface-mount device designed for efficient power switching. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 9.5A at 25°C. The Rds On is specified at a maximum of 20mOhm at 9.5A and 4.5V gate-source voltage. Key characteristics include a gate charge (Qg) of 74 nC at 5V and an input capacitance (Ciss) of 6000 pF at 10V. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel (TR). It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 10 V |