IRF7233TR
MOSFET P-CH 12V 9.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF7233TR, is engineered for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) capability of 9.5A at 25°C, with a maximum power dissipation of 2.5W. The IRF7233TR offers a low on-resistance (Rds On) of 20mOhm at 9.5A and 4.5V gate-source voltage, ensuring minimal conduction losses. Its typical applications span automotive systems and industrial power control, where robust performance is critical. The component is supplied in a Tape & Reel (TR) package, utilizing an 8-SOIC (0.154", 3.90mm Width) footprint for surface mounting. Key electrical parameters include a gate charge of 74 nC at 5V and input capacitance (Ciss) of 6000 pF at 10V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 10 V |