IRF7233PBF
MOSFET P-CH 12V 9.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, IRF7233PBF, offers a 12V drain-source voltage and 9.5A continuous drain current at 25°C. This surface mount device features a low on-resistance of 20mOhm at 9.5A and 4.5V Vgs, with a maximum gate charge of 74 nC at 5V. The input capacitance (Ciss) is rated at 6000 pF at 10V. Designed for efficient power switching, this MOSFET operates within a temperature range of -55°C to 150°C. The device is housed in an 8-SOIC package and is suitable for applications in consumer electronics, industrial automation, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 10 V |