IRF7220TRPBF
MOSFET P-CH 14V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7220TRPBF, is a surface-mount device designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 14V and offers a continuous Drain Current (Id) of 11A at 25°C (Ta). The Rds On is specified as a maximum of 12mOhm at 11A and 4.5V gate-source voltage. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. The 8-SOIC package (0.154" width) is supplied on tape and reel. Key parameters include a gate charge (Qg) of 125 nC at 5V and input capacitance (Ciss) of 8075 pF at 10V. This MOSFET is commonly employed in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 14 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 10 V |
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