IRF7220GTRPBF
MOSFET P-CH 14V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7220GTRPBF, offers a 14V drain-source breakdown voltage and 11A continuous drain current at 25°C. This surface-mount device features a low on-resistance of 12mOhm at 11A and 4.5V Vgs. The IRF7220GTRPBF is designed for efficient power switching applications. Key parameters include a maximum power dissipation of 2.5W and a gate charge of 125 nC at 5V. The component's input capacitance (Ciss) is 8075 pF at 10V. It operates across a temperature range of -55°C to 150°C. The 8-SOIC package is supplied on tape and reel. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 14 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 10 V |
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