IRF7220
MOSFET P-CH 14V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF7220 is a P-channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 14V and a continuous Drain Current (Id) of 11A at 25°C. The IRF7220 offers a low on-resistance of 12mOhm at 11A and 4.5V, with typical drive voltages ranging from 2.5V to 4.5V. Its surface mount 8-SOIC package (0.154", 3.90mm width) facilitates efficient board layout. Key parameters include a maximum power dissipation of 2.5W (Ta) and a gate charge (Qg) of 125nC at 5V. Input capacitance (Ciss) is rated at 8075pF maximum at 10V. This device operates across a temperature range of -55°C to 150°C (TJ). Its robust performance makes it suitable for use in automotive, industrial automation, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 14 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 10 V |