IRF7210TRPBF
MOSFET P-CH 12V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7210TRPBF is a P-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 16A at 25°C (Ta). The Rds(On) is specified as a maximum of 7mOhm at 16A and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 212 nC at 5V and Input Capacitance (Ciss) of 17179 pF at 10V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in an 8-SOIC package suitable for surface mounting and supplied on tape and reel. The maximum power dissipation is 2.5W (Ta). This device finds application in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 16A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 500µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 212 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17179 pF @ 10 V |