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IRF7210PBF

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IRF7210PBF

MOSFET P-CH 12V 16A 8SO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF7210PBF is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) capability of 16A at 25°C. The IRF7210PBF exhibits a low on-resistance (Rds On) of 7mOhm at 16A and 4.5V Vgs, ensuring efficient power transfer. Its gate charge (Qg) is 212 nC maximum at 5V Vgs, and input capacitance (Ciss) is 17179 pF maximum at 10V Vds. This MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W (Ta). The gate drive voltage range for maximum efficiency is 2.5V to 4.5V, with a maximum Vgs of ±12V and a threshold voltage (Vgs(th)) of 600mV minimum at 500µA. This device is commonly utilized in automotive, industrial automation, and power management systems.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs7mOhm @ 16A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id600mV @ 500µA (Min)
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs212 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds17179 pF @ 10 V

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