IRF7207TRPBF
MOSFET P-CH 20V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, IRF7207TRPBF, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 5.4A at 25°C (Tc). This device features a low on-resistance of 60mOhm maximum at 5.4A and 4.5V Vgs, with a typical gate charge of 22nC at 4.5V. Optimized for high-efficiency switching applications, it is suitable for power management in consumer electronics, industrial automation, and automotive systems. The 8-SOIC package facilitates surface mounting and is supplied in Tape & Reel (TR) for automated assembly processes. Maximum power dissipation is rated at 2.5W (Tc), with an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |