IRF7207TR
MOSFET P-CH 20V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7207TR is a P-channel power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current rating of 5.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 60mOhm at 5.4A and 4.5V Vgs, with a typical gate charge (Qg) of 22 nC at 4.5V. The input capacitance (Ciss) is a maximum of 780 pF at 15V Vds.
This surface-mount device, packaged in an 8-SOIC (0.154", 3.90mm Width) configuration, offers a maximum power dissipation of 2.5W (Tc). It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±12V, with a threshold voltage (Vgs(th)) of 700mV at 250µA. The IRF7207TR is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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