IRF7207PBF
MOSFET P-CH 20V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF7207PBF, is a surface-mount device in an 8-SOIC package. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5.4A at 25°C. The Rds On is specified at a maximum of 60mOhm at 5.4A and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 22nC (max) at 4.5V Vgs and an Input Capacitance (Ciss) of 780pF (max) at 15V Vds. The device offers a maximum power dissipation of 2.5W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). It is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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