IRF7205PBF
MOSFET P-CH 30V 4.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7205PBF, is a surface mount device in an 8-SOIC package. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 4.6A at 25°C. The maximum on-resistance (Rds On) is 70mOhm at 4.6A and 10V gate drive. Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 870 pF maximum at 10V. The device supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 3V maximum at 250µA. Power dissipation is rated at 2.5W (Tc). Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in industrial and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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