IRF7204TRPBF
MOSFET P-CH 20V 5.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7204TRPBF, features a 20V drain-source voltage and a continuous drain current of 5.3A at 25°C. This surface mount device, housed in an 8-SOIC package, offers a maximum on-resistance of 60mOhm at 5.3A and 10V Vgs. Key parameters include a gate charge of 25 nC at 10V and input capacitance of 860 pF at 10V. The device operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 2.5W (Tc). This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |