IRF7204PBF
MOSFET P-CH 20V 5.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, IRF7204PBF, offers a 20V drain-source voltage and a continuous drain current of 5.3A at 25°C. This surface mount device features a low Rds(on) of 60mOhm at 5.3A and 10V Vgs. The P-Channel technology, combined with a gate charge of 25 nC (max) at 10V and input capacitance of 860 pF (max) at 10V, makes it suitable for various power management applications. With a maximum power dissipation of 2.5W (Tc) and an operating temperature range of -55°C to 150°C, this component is designed for demanding environments. The 8-SOIC package ensures efficient integration into compact board designs. This MOSFET is utilized across industries including automotive, consumer electronics, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |