IRF7203TR
MOSFET P-CH 20V 4.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET with part number IRF7203TR. This component features a 20V drain-source voltage and a continuous drain current of 4.3A at 25°C (Ta). It is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and supplied on tape and reel (TR). The device exhibits a maximum on-resistance of 100mOhm at 2A and 10V, with a typical gate charge of 40nC at 10V and input capacitance of 750pF at 20V. This MOSFET is utilized in various industrial applications, including power management and switching circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 20 V |
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