IRF7202TR
MOSFET P-CH 20V 2.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF7202TR, is a surface mount device in an 8-SOIC package. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). With a maximum Rds(on) of 250mOhm at 1A and 10V, it offers efficient power switching. The gate drive voltage range is from 4.5V to 10V, with a maximum gate charge (Qg) of 15nC at 10V and input capacitance (Ciss) of 270pF at 20V. Maximum power dissipation is 1.6W (Ta) or 2.5W (Tc). This MOSFET is utilized in applications such as power management, battery charging, and load switching across various industrial and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 20 V |