IRF7201TRPBF
MOSFET N-CH 30V 7.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7201TRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7.3A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 30mOhm when driven at 10V Vgs and 7.3A Id. With a Gate Charge (Qg) of 28 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 550 pF (max) at 25V Vds, it offers optimized switching characteristics. The device is rated for a maximum power dissipation of 2.5W at 25°C. It is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and supplied on tape and reel. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics segments.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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