IRF7201TR
MOSFET N-CH 30V 7.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRF7201TR is an N-Channel HEXFET® power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 7.3A at 25°C (Tc). The low on-resistance of 30mOhm at 7.3A and 10V gate drive ensures minimal conduction losses. With a gate charge (Qg) of 28 nC at 10V and input capacitance (Ciss) of 550 pF at 25V, it is suitable for moderate switching frequencies. The device offers a maximum power dissipation of 2.5W (Tc) and operates across a wide temperature range from -55°C to 150°C (TJ). Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, the IRF7201TR is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |