IRF7201
MOSFET N-CH 30V 7.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7201 is an N-channel power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 7.3 A at 25°C. The Rds(on) is specified at a maximum of 30 mOhm at 7.3 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 28 nC (max) at 10 V and an Input Capacitance (Ciss) of 550 pF (max) at 25 V. The device supports a gate drive range from 4.5 V to 10 V and has a maximum Vgs of ±20V. The IRF7201 is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and has a power dissipation of 2.5 W. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power management systems and general-purpose switching applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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