IRF7171MTRPBF
MOSFET N-CH 100V 15A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FASTIRFET™, HEXFET® N-Channel MOSFET, part number IRF7171MTRPBF. This surface mount device offers 100V drain-source voltage and a continuous drain current of 15A at 25°C ambient, scaling to 93A at 25°C case temperature. Featuring a low Rds(on) of 6.5mOhm at 56A and 10V Vgs, this MOSFET utilizes a DIRECTFET™ Isometric MN package. Maximum power dissipation is 2.8W ambient and 104W case. Key parameters include a gate charge of 54 nC at 10V and input capacitance of 2160 pF at 50V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: FASTIRFET™, HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 50 V |
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