IRF6898MTR1PBF
MOSFET N-CH 25V 35A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6898MTR1PBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a 25V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 35A at 25°C ambient and 213A at 25°C case temperature. The low on-resistance (Rds On) of 1.1mOhm at 35A and 10V gate-source voltage ensures efficient power transfer. With a maximum gate charge (Qg) of 62nC at 4.5V and input capacitance (Ciss) of 5435pF at 13V, it is optimized for fast switching speeds. The MOSFET incorporates a Schottky diode for improved performance. Housed in a DIRECTFET™ Isometric MX surface mount package, this component offers excellent thermal management with a power dissipation of 2.1W (Ta) and 78W (Tc). Operating temperature range is -40°C to 150°C (TJ). This component is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 213A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 35A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.1W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5435 pF @ 13 V |