IRF6894MTR1PBF
MOSFET N-CH 25V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6894MTR1PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 25V drain-to-source voltage (Vdss) rating and offers a continuous drain current (Id) of 32A at 25°C ambient, scaling to 160A at 25°C case temperature. The device exhibits a low on-resistance (Rds(on)) of 1.3mOhm maximum at 33A and 10V Vgs, with a gate charge (Qg) of 39 nC maximum at 4.5V Vgs. Key specifications include input capacitance (Ciss) of 4160 pF maximum at 13V Vds and a maximum gate-source voltage (Vgs(max)) of ±16V. The MOSFET incorporates a Schottky diode for improved performance. Power dissipation is rated at 2.1W (Ta) and 54W (Tc). This device is housed in a DirectFET™ Isometric MX package suitable for surface mounting and is supplied on a tape and reel. It finds application in power management solutions across various industries, including automotive and industrial.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.1W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |