IRF6892STR1PBF
MOSFET N-CH 25V 28A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6892STR1PBF is a 25V N-Channel Power MOSFET designed for high-performance applications. This device features a low Rds(on) of 1.7 mOhm at 28A and 10V Vgs, enabling efficient power switching. With a continuous drain current rating of 28A at ambient temperature and 125A at case temperature, it offers substantial current handling capability. The MOSFET boasts a maximum power dissipation of 2.1W (Ta) and 42W (Tc), supported by a low thermal resistance in its DirectFET™ S3C package. Gate drive requirements are met with a 4.5V minimum drive voltage, and a gate charge of 25 nC at 4.5V Vgs. Input capacitance (Ciss) is 2510 pF at 13V Vds. Operating across a broad temperature range of -40°C to 150°C (TJ), this component is suitable for automotive, industrial power supplies, and high-efficiency DC-DC converters. The DirectFET™ Isometric S3C package facilitates efficient heat dissipation and robust system integration.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric S3C |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 125A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 50µA |
| Supplier Device Package | DIRECTFET™ S3C |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2510 pF @ 13 V |
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