IRF6811STR1PBF
MOSFET N CH 25V 19A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6811STR1PBF is an N-channel MOSFET designed for demanding applications. This component features a 25V drain-source breakdown voltage and offers a continuous drain current capability of 19A at ambient temperature and 74A at case temperature. With a low on-resistance of 3.7mOhm at 19A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 17nC at 4.5V, contributing to efficient switching. The input capacitance (Ciss) is 1590pF maximum at 13V. Power dissipation is rated at 2.1W (Ta) and 32W (Tc). The IRF6811STR1PBF utilizes the DIRECTFET™ SQ package for surface mounting, ensuring high thermal performance. This MOSFET is suitable for use in power management, automotive, and industrial systems. It operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 13 V |