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IRF6798MTRPBF

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IRF6798MTRPBF

MOSFET N-CH 25V 37A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' HEXFET® IRF6798MTRPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 25V Drain-Source voltage and a continuous drain current capability of 37A at ambient temperature and 197A at case temperature. With a low on-resistance of 1.3mOhm at 37A and 10V Vgs, it minimizes conduction losses. The device includes an integrated Schottky diode for improved switching performance. The DIRECTFET™ MX package offers excellent thermal management, supporting up to 78W of power dissipation. Key parameters include a gate charge of 75 nC at 4.5V and an input capacitance of 6560 pF at 13V. This MOSFET is suitable for demanding power conversion tasks in automotive, industrial, and consumer electronics sectors. It operates across a temperature range of -40°C to 150°C.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric MX
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 37A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id2.35V @ 150µA
Supplier Device PackageDIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6560 pF @ 13 V

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