IRF6795MTR1PBF
MOSFET N-CH 25V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6795MTR1PBF is an N-Channel MOSFET designed for high-performance applications. This component features a 25V drain-to-source voltage (Vdss) and offers continuous drain current capabilities of 32A at ambient temperature and 160A at case temperature. The IRF6795MTR1PBF exhibits a low on-resistance of 1.8mOhm at 32A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 53 nC at 4.5V and input capacitance (Ciss) of 4280 pF at 13V. Power dissipation is rated at 2.8W (Ta) and 75W (Tc). The device is packaged in a DirectFET™ Isometric MX for surface mounting and operates across a temperature range of -40°C to 150°C. This MOSFET is suitable for power management solutions across various industries.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4280 pF @ 13 V |
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