IRF6794MTR1PBF
MOSFET N-CH 25V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6794MTR1PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 25V Drain-Source Voltage (Vdss) and can handle a continuous Drain Current (Id) of 32A at 25°C ambient, increasing to 200A at 25°C case temperature. The Rds(On) is specified at a maximum of 1.7mOhm at 32A and 10V Vgs. With a maximum Gate Charge (Qg) of 47 nC at 4.5V Vgs and a Ciss of 4420 pF at 13V Vds, it is suitable for high-frequency operation. The device incorporates a Schottky Diode within its body and offers a maximum power dissipation of 2.8W (Ta) and 100W (Tc). Packaged in a Surface Mount DIRECTFET™ Isometric MX, this MOSFET operates across a temperature range of -40°C to 150°C (TJ). The IRF6794MTR1PBF is utilized in power supplies, voltage regulators, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4420 pF @ 13 V |
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