IRF6785MTR1PBF
MOSFET N-CH 200V 3.4A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF6785MTR1PBF, is a 200V device in a DirectFET™ Isometric MZ surface mount package. This MOSFET offers continuous drain current capabilities of 3.4A at 25°C ambient and 19A at 25°C case temperature. With a maximum Rds(on) of 100mOhm at 4.2A and 10V, and a maximum gate charge of 36 nC at 10V, it is suitable for demanding power applications. The component features a maximum power dissipation of 2.8W ambient and 57W case, with an operating temperature range of -40°C to 150°C. This robust design finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |