IRF6775MTR1PBF
MOSFET N-CH 150V 4.9A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF6775MTR1PBF, is designed for demanding applications. This MOSFET features a 150V drain-source breakdown voltage and a continuous drain current capability of 4.9A at 25°C ambient and 28A at 25°C case temperature. The Rds(On) is specified at a maximum of 56mOhm at 5.6A and 10V Vgs. With a low gate charge of 36 nC at 10V, it offers efficient switching performance. The component utilizes Metal Oxide technology and is housed in a DirectFET™ Isometric MZ surface mount package, supplied on a tape and reel. Maximum power dissipation is 2.8W (Ta) and 89W (Tc). This device is suitable for power management solutions across various industries.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1411 pF @ 25 V |