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IRF6729MTRPBF

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IRF6729MTRPBF

MOSFET N-CH 30V 31A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF6729MTRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 31A at 25°C ambient and 190A at 25°C case temperature. The low on-resistance of 1.8mOhm at 31A and 10V gate-source voltage, coupled with a maximum gate charge of 63 nC at 4.5V, ensures minimal conduction and switching losses. The IRF6729MTRPBF utilizes Infineon's DIRECTFET™ MX package, offering superior thermal performance with a power dissipation of 2.8W (ambient) and 104W (case). This low thermal resistance makes it suitable for demanding power management solutions in automotive, industrial automation, and power supply applications. Its operating temperature range of -40°C to 150°C (TJ) further enhances its robustness in challenging environments. The MOSFET gate drive voltage ranges from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is a maximum of 6030 pF at 15V.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric MX
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 31A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id2.35V @ 150µA
Supplier Device PackageDIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6030 pF @ 15 V

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