IRF6727MTR1PBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6727MTR1PBF is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and supports a continuous drain current of 32A at ambient temperature and 180A at case temperature. The low on-resistance of 1.7mOhm at 32A and 10V gate drive voltage, coupled with a maximum power dissipation of 89W at case temperature, makes it suitable for demanding thermal environments. Key parameters include a gate charge of 74 nC at 4.5V and input capacitance of 6190 pF at 15V. The device utilizes MOSFET technology and is housed in a DirectFET™ Isometric MX surface mount package, supplied on tape and reel. Its robust design finds application in areas such as automotive power management and industrial power supplies. The operating temperature range is from -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF @ 15 V |
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