IRF6726MTRPBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6726MTRPBF is an N-Channel MOSFET designed for high-performance applications. This component features a 30 V Drain-to-Source voltage (Vdss) and supports continuous drain currents of 32 A at 25°C ambient temperature, scaling to 180 A under 25°C case temperature. The device exhibits a maximum on-resistance (Rds On) of 1.7 mOhm at 32 A drain current and 10 V gate-source voltage. With a gate charge (Qg) of 77 nC at 4.5 V, it offers efficient switching characteristics. The MOSFET is packaged in a DirectFET™ Isometric MT, suitable for surface mounting, and operates across a wide temperature range from -40°C to 150°C. Power dissipation is rated at 2.8 W (Ta) and 89 W (Tc). This component is commonly utilized in power management solutions within automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6140 pF @ 15 V |
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