IRF6726MTR1PBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series MOSFET, part number IRF6726MTR1PBF, is an N-Channel device featuring a 30V drain-source voltage. This surface mount component, housed in a DirectFET™ Isometric MT package, offers a continuous drain current of 32A at 25°C (Ta) and up to 180A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.7mOhm at 32A and 10V, with a gate drive range from 4.5V to 10V. Notable characteristics include a maximum gate charge of 77 nC at 4.5V and input capacitance of 6140 pF at 15V. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). This MOSFET is suitable for applications in computing, power supplies, and server infrastructure. It operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6140 pF @ 15 V |