IRF6725MTRPBF
MOSFET N-CH 30V 28A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6725MTRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion. It features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 28A at 25°C ambient and 170A at 25°C case temperature. The device offers a low on-resistance of 2.2mOhm maximum at 28A and 10V Vgs. With a maximum power dissipation of 2.8W (Ta) and 100W (Tc), it is suitable for demanding applications. Key electrical parameters include a gate charge (Qg) of 54 nC at 4.5V and input capacitance (Ciss) of 4700 pF at 15V. This MOSFET utilizes the DIRECTFET™ Isometric MX surface mount package, enabling efficient thermal management. It operates across a temperature range of -40°C to 150°C. The IRF6725MTRPBF is commonly employed in server power supplies, voltage regulator modules (VRMs), and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |