IRF6725MTR1PBF
MOSFET N-CH 30V 28A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6725MTR1PBF is an N-channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 28A at ambient temperature, scaling to 170A at case temperature. The low on-resistance of 2.2mOhm at 28A and 10V Vgs, coupled with a maximum power dissipation of 100W at case temperature, makes it suitable for demanding power management tasks.
Key electrical parameters include a gate charge (Qg) of 54 nC at 4.5V and input capacitance (Ciss) of 4700 pF at 15V. The device supports drive voltages from 4.5V to 10V and has a gate-source voltage limit of ±20V. Packaged in a DirectFET™ Isometric MX for efficient thermal management, this surface mount component operates across a temperature range of -40°C to 150°C. It is commonly utilized in automotive, industrial, and computing power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |