IRF6722STRPBF
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6722STRPBF, is engineered for high-performance power management applications. This device features a 30V drain-source voltage and supports a continuous drain current of 13A at ambient temperature and 58A at case temperature. The IRF6722STRPBF offers a low on-resistance of 7.3mOhm maximum at 13A and 10V, facilitated by its 4.5V to 10V drive voltage range and a maximum gate charge of 17 nC at 4.5V. With a maximum power dissipation of 2.2W (ambient) and 42W (case), it operates reliably across a temperature range of -40°C to 150°C. The component utilizes advanced MOSFET technology and is housed in a DirectFET™ Isometric ST surface mount package, supplied on tape and reel. This MOSFET is commonly found in industrial power supplies, automotive electronics, and high-efficiency DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 15 V |