IRF6722STR1PBF
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6722STR1PBF, offers a 30V drain-source voltage and a continuous drain current of 13A at 25°C ambient, increasing to 58A under continuous case temperature. This device features a low on-resistance of 7.3mOhm maximum at 13A and 10V Vgs, with a gate charge of 17nC at 4.5V. The input capacitance (Ciss) is specified at 1320pF maximum at 15V. Designed for surface mounting, it utilizes the DirectFET™ Isometric ST package. Power dissipation is rated at 2.2W ambient and 42W case temperature. The operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 15 V |