IRF6722MTR1PBF
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6722MTR1PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 13A at 25°C ambient and 56A at 25°C case temperature. The low on-resistance (Rds On) of 7.7mOhm at 13A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 2.3W (Ta) and 42W (Tc), and an operating temperature range of -40°C to 150°C, it is suitable for demanding thermal environments. The IRF6722MTR1PBF utilizes Infineon's DIRECTFET™ Isometric MP package for superior thermal performance and ease of surface mounting. Key electrical characteristics include a gate charge (Qg) of 17 nC at 4.5V Vgs and an input capacitance (Ciss) of 1300 pF at 15V Vds. This MOSFET is commonly employed in automotive, industrial power supplies, and high-performance computing applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | DIRECTFET™ MP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |