IRF6721STR1PBF
MOSFET N-CH 30V 14A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6721STR1PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 14A at ambient temperature and 60A at case temperature. The low on-resistance, specified as 7.3mOhm maximum at 14A and 10V gate-source voltage, is achieved through its advanced MOSFET technology. With a maximum gate charge of 17 nC at 4.5V, it ensures efficient switching performance. The IRF6721STR1PBF is housed in a DirectFET™ Isometric SQ surface mount package, offering excellent thermal management with a continuous power dissipation of 42W at case temperature. Operating across a wide temperature range of -40°C to 150°C, this MOSFET is suitable for use in power supply designs, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 15 V |