IRF6718L2TR1PBF
MOSFET N-CH 25V 61A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6718L2TR1PBF is an N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 25V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 61A at 25°C ambient, scaling to 270A at 25°C case temperature. The low on-resistance is specified at a maximum of 0.7mOhm at 61A and 10V gate-source voltage (Vgs). With a maximum gate charge (Qg) of 96 nC at 4.5V Vgs and input capacitance (Ciss) of 6500 pF at 13V, it supports high switching frequencies. The device offers a maximum power dissipation of 4.3W (Ta) and 83W (Tc). Operating across a wide temperature range from -55°C to 175°C, it is housed in a surface mount DirectFET™ Isometric L6 package and supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Ta), 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 61A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET L6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 13 V |
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